发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To provide a semiconductor device which has high reliability against thermal variation and a low cost, can be formed thin and lays electrodes as an LGA. SOLUTION: A first and second buildup layers 13, 14 made of soft resins each having a modulus of elasticity of 5000 MPa or less are formed on one surface of a hard core substrate 12, and an electrode 30 connected to a via 29 is formed on the outer surface of the second buildup layer 14. A semiconductor chip 10 is mounted through an anisotropically conductive layer 15 on a surface of the core substrate 12, having no buildup layer.</p>
申请公布号 JP2002343903(A) 申请公布日期 2002.11.29
申请号 JP20010147024 申请日期 2001.05.16
申请人 SONY CORP 发明人 YOSHIZAWA AKIRA;ISHIYAMA SATORU;NAKAMURA YOSHIYUKI
分类号 H05K3/46;H01L23/12;(IPC1-7):H01L23/12 主分类号 H05K3/46
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