发明名称 METHOD FOR MANUFACTURING RESISTIVE ELEMENT, METHOD FOR MANUFACTURING PRESSURE SENSOR ELEMENT, PRESSURE SENSOR ELEMENT, PRESSURE SENSOR, ALTIMETER, ELECTRONIC APPARATUS, AND MOVING OBJECT
摘要 A method for manufacturing a resistive element includes: preparing a substrate including an n-type silicon layer; doping the silicon layer with an impurity to thereby form a resistive region; heat-treating the resistive region by any of rapid thermal annealing, flash lamp annealing, and excimer laser annealing; and epitaxially growing silicon on the resistive region to thereby form a covering layer.
申请公布号 US2016347604(A1) 申请公布日期 2016.12.01
申请号 US201615165040 申请日期 2016.05.26
申请人 Seiko Epson Corporation 发明人 SHIMADA Hiroyuki
分类号 B81B3/00;B81C1/00 主分类号 B81B3/00
代理机构 代理人
主权项 1. A method for manufacturing a resistive element, comprising: preparing a substrate including a silicon layer including an n-type or p-type region; doping the region with an impurity to thereby form a resistive region; heat-treating the resistive region by any of rapid thermal annealing, flash lamp annealing, and excimer laser annealing; and epitaxially growing silicon on the resistive region to thereby form a covering layer.
地址 Tokyo JP
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