发明名称 |
METHOD FOR MANUFACTURING RESISTIVE ELEMENT, METHOD FOR MANUFACTURING PRESSURE SENSOR ELEMENT, PRESSURE SENSOR ELEMENT, PRESSURE SENSOR, ALTIMETER, ELECTRONIC APPARATUS, AND MOVING OBJECT |
摘要 |
A method for manufacturing a resistive element includes: preparing a substrate including an n-type silicon layer; doping the silicon layer with an impurity to thereby form a resistive region; heat-treating the resistive region by any of rapid thermal annealing, flash lamp annealing, and excimer laser annealing; and epitaxially growing silicon on the resistive region to thereby form a covering layer. |
申请公布号 |
US2016347604(A1) |
申请公布日期 |
2016.12.01 |
申请号 |
US201615165040 |
申请日期 |
2016.05.26 |
申请人 |
Seiko Epson Corporation |
发明人 |
SHIMADA Hiroyuki |
分类号 |
B81B3/00;B81C1/00 |
主分类号 |
B81B3/00 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method for manufacturing a resistive element, comprising:
preparing a substrate including a silicon layer including an n-type or p-type region; doping the region with an impurity to thereby form a resistive region; heat-treating the resistive region by any of rapid thermal annealing, flash lamp annealing, and excimer laser annealing; and epitaxially growing silicon on the resistive region to thereby form a covering layer. |
地址 |
Tokyo JP |