| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide memory cell structure of a metal (or) programmable ROM, capable of saving energy by improving an integration rate and read-out operation speed. SOLUTION: This structure is provided with word lines, bit lines, first and second associative ground lines, first bit cells selected by a signal of the word line and a signal of the first associative ground line, and second bit cells selected by a signal of the word line and a signal of the second associative ground line, and the first bit cells and the second bit cells share on cell transistor of which one end is connected to the bit lines. The other end of the cell transistor is connected or made selectively floating to any of the first associative ground line, the second associative ground line, and the ground line, and a gate of the cell transistor is connected to the word lines.</p> |
