| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to enhance the surface area of a storage electrode by forming a polysilicon spacer at both sidewalls of a selective oxide layer. CONSTITUTION: An insulating layer(4) with a contact hole is formed on a semiconductor substrate(1) with a transistor. The first polysilicon layer(5') is filled in the contact hole. A selective oxide layer is selectively formed on the surface of the insulating layer. By depositing the second polysilicon layer on the resultant structure and blanket etching of the second polysilicon layer, a polysilicon spacer(8') is formed at both sidewalls of the selective oxide layer. By removing the selective oxide layer, a storage electrode including the first polysilicon layer and the polysilicon spacer is then formed. A dielectric film(9) and the third polysilicon layer(10) as a plate electrode are sequentially formed on the storage electrode.
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