| 摘要 |
On a cross section along a region put between word lines, trench isolation oxide films are formed on a surface of a semiconductor substrate and source lines and bit lines are formed in an element formation region put between the trench isolation oxide films. A thick insulating film is formed on the source lines, the bit lines and the trench isolation oxide films. A recess is formed in a region of the semiconductor substrate located between the source line and the bit line. As a result, a nonvolatile semiconductor memory device capable of reducing a capacitance between a floating gate electrode and the semiconductor substrate is obtained.
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