Resistive random-access memory with implanted and radiated channels

摘要

Resistive RAM (RRAM) devices having increased uniformity and related manufacturing methods are described. Greater uniformity of performance across an entire chip that includes larger numbers of RRAM cells can be achieved by uniformly creating enhanced channels in the switching layers through the use of radiation damage. The radiation, according to various described embodiments, can be in the form of ions, electromagnetic photons, neutral particles, electrons, and ultrasound.

主权项

1. A resistive random-access memory device comprising:
a first electrode; a second electrode; and a switching region that is between the first and second electrodes and comprises one or more enhanced mobility pathway structures that have been formed in a process of fabricating the device and extend at respective locations in the switching region; wherein said enhanced mobility pathway structures:
are configured to provide enhanced mobility of charged species;have respective electrical resistances that vary with a switching voltage applied between the first and second electrodes; andcomprise damage in the switching region caused by ion implantation at least a substantial portion of which has passed through the switching region and has been deposited outside the switching region.