| 摘要 |
The present invention relates to a PIN photo diode, whish shows both high sensitivity and superior high frequency performance by the reduction of the dark current and the intrinsic capacitance. The PIN diode comprises a substrate made of InP, n-type layer made of InGaAs doped with Si, i-type layer made of GaInAs with unintentionally doped, and the p-type layer made of GaInAs doped with Zn, respective layers are sequentially grown and formed to a mesa structure by conventional technique. A passivation layer of InP covers the p-type layer and the i-type layer. The thickness h2 of a center region of the p-type layer is thinner than the thickness h1 of other region surrounding the center. By the configuration, the reduction of the dark current, the enhancing of the high frequency performance by the reduction of the intrinsic capacitance, and the improvement of the sensitivity by the decreasing the absorption in the p-type layer are achieved.
|
