| 摘要 |
A semiconductor device which includes a capacitor wherein the capacitance of the capacitor can be prevented from being lowered even in the case that the capacitor is miniaturized. A core insulating film having the core of the capacitor formed above a semiconductor substrate, a capacitor lower electrode formed so as to cover side surfaces of this core insulating film, a capacitor dielectric film formed so as to cover the surface of this capacitor lower electrode and the upper surface of the core insulating film and a capacitor upper electrode formed so as to cover the surface of this core insulating film are provided so that the bottom surface of the core insulating film is positioned lower than the bottom surface of the capacitor lower electrode.
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