| 摘要 |
<p>PROBLEM TO BE SOLVED: To efficiently manufacture a photovoltaic element, in which a microcrystal semiconductor is used for a photoelectric conversion layer, achieving higher conversion efficiency than before. SOLUTION: The process for forming an i-typeμc-Si:H layer 4, which serves as a photoelectric conversion layer by a plasma CVD method, is divided into two steps. In the first half step, the dilution ratio of hydrogen of a material gas (SiH4 ) is set higher, while the electric power for generating plasma is set higher to effectively generate the nucleus of microcrystal silicon. In the second half step, the dilution ratio of hydrogen of the material gas is set lower, while the electric power for generating plasma is set lower, so that the rate for film, formation is raised.</p> |
