RGB-IR PHOTOSENSOR WITH NONUNIFORM BURIED P-WELL DEPTH PROFILE FOR REDUCED CROSS TALK AND ENHANCED INFRARED SENSITIVITY

摘要

A front-side-interconnect (FSI) red-green-blue-infrared (RGB-IR) photosensor array has photosensors of a first type with a diffused N-type region in a P-type well, the P-type well diffused into a high resistivity semiconductor layer; photosensors of a second type, with a deeper diffused N-type region in a P-type well, the P-type well; and photosensors of a third type with a diffused N-type region diffused into the high resistivity semiconductor layer underlying all of the other types of photosensors. In embodiments, photosensors of a fourth type have a diffused N-type region in a P-type well, the N-type region deeper than the N-type region of photosensors of the first and second types.

主权项

1. A front-side imaging (FSI) red-green-blue-infrared (RGB-IR) photosensor array comprising:
a plurality of photosensors of a first type, where each photosensor of the first type comprises a diffused N-type region in a P-type well, the P-type well diffused into a high resistivity semiconductor layer; a plurality of photosensors of a second type, where each photosensor of the second type comprises a diffused N-type region in a P-type well, the P-type well diffused into the high resistivity semiconductor layer; a plurality of photosensors of a third type, where each photosensor of the third type comprises a diffused N-type region diffused into the high resistivity semiconductor layer; where the diffused N-type regions of the photosensors of the first type are diffused to a first depth; the diffused N-type regions of the photosensors of the second type are diffused to a second depth, the first and second depth being different; and where the P− type wells of the photosensors of the first type are diffused to a third depth; the P− wells of the photosensors of the second type are diffused to a fourth depth, the third and fourth depth being different.