METHOD USING TITANIUM DOPED ALUMINUM OXIDE FOR COATING FERROELECTRIC MATERIAL AND DEVICE INCLUDING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a titanium doped aluminum oxide layer for coating a ferroelectric material and the manufacturing method. SOLUTION: An integrated circuit device is provided with the ferroelectric material positioned between a first metal electrode and a second metal electrode and a passivation layer containing a titanium doped aluminum oxide positioned on the first metal electrode. A method for manufacturing the integrated circuit device including a ferroelectric structure having the passivation layer includes a process for providing a deposition chamber, a process for providing the ferroelectric structure including the ferroelectric material positioned between an upper electrode and a lower electrode to the deposition chamber, a process for providing aluminum and titanium to the deposition chamber, and a process for forming titanium doped aluminum oxide passivation layer on the upper electrode.