发明名称 |
Method for selectively depositing diffusion barriers |
摘要 |
A method is provided for selectively depositing a silicided metal nitride diffusion barrier layer in a semiconductor structure including providing at least one anisotropically etched opening extending through at least one insulating layer and in closed communication with a metallic underlayer; conformally depositing a metal nitride layer over the at least one anisotropically etched opening under conditions such that the metal nitride layer has a relatively higher deposition rate onto the sidewalls of the at least one anisotropically etched opening for a period of time compared to a deposition rate over the metallic underlayer; and, exposing the metal nitride layer to a silicon containing gaseous ambient under conditions such that silicon is incorporated into the metal nitride layer to form a silicided metal nitride layer.
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申请公布号 |
US2003036263(A1) |
申请公布日期 |
2003.02.20 |
申请号 |
US20010933976 |
申请日期 |
2001.08.20 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LIN JING-CHENG;SHUE SHAU-LIN |
分类号 |
H01L21/285;H01L21/768;(IPC1-7):H01L21/476;H01L21/44 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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