发明名称 READ AND WRITE APPARATUS AND METHOD FOR A DUAL PORT MEMORY
摘要 An apparatus is provided which comprises: a memory array; first logic to detect whether first and second word-lines (WL) for a row of the memory array are active; and second logic to deactivate one of the first and second WLs such that one of the first and second WLs is active for the row.
申请公布号 US2016358643(A1) 申请公布日期 2016.12.08
申请号 US201514731319 申请日期 2015.06.04
申请人 Intel Corporation 发明人 Kolar Pramrod;Ma Wei-Hsiang;Pandya Gunjan H.
分类号 G11C11/419 主分类号 G11C11/419
代理机构 代理人
主权项 1. An apparatus comprising: a memory array; a first logic to detect whether first and second word-lines (WLs) for a row of the memory array are active; and a second logic to deactivate one of the first and second WLs such that one of the first and second WLs is active for the row, wherein the memory array includes memory bit-cells, at least one of which is accessible via at least first and second ports, wherein the first port is associated with the first WL and the second port is associated with the second WL, and wherein the apparatus further comprises: a first switch coupled to first and second bit-lines associated with a memory bit-cell, wherein the first switch is operable to re-route data on the first and second bit-lines to either the first and/or second ports or to the memory array.
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