发明名称 Memory device and method for temperature-based control over write and/or read operations
摘要 The preferred embodiments described herein provide a memory device and method for temperature-based control over write and/or read operations. In one preferred embodiment, the temperature of a memory array is monitored, and a write operation to the memory array is prevented in response to the monitored temperature reaching a threshold temperature. In another preferred embodiment, the temperature of a memory array is monitored, and a read operation from the memory array is prevented in response to the monitored temperature reaching a threshold temperature. Other preferred embodiments are provided, and each of the preferred embodiments can be used alone or in combination with one another.
申请公布号 US2003046020(A1) 申请公布日期 2003.03.06
申请号 US20010944613 申请日期 2001.08.31
申请人 MATRIX SEMICONDUCTOR, INC. 发明人 SCHEUERLEIN ROY E.
分类号 G01K3/00;G11C7/04;(IPC1-7):G01K1/08;G06F15/00 主分类号 G01K3/00
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