发明名称 GATE DRIVE CIRCUIT AND POWER CONVERTER USING THE SAME
摘要 PROBLEM TO BE SOLVED: To surely detect an overcurrent even in a turn-on period to protect a switching device from the overcurrent. SOLUTION: When a switching signal is inputted from an upper hierarchy control circuit, a predicted collector voltage pattern, which is predicted to be generated when an IGBT 1 is in switching operation, is outputted by a predicted voltage pattern generator 2 to a comparator 4 and a collector voltage of the IGBT 1 is outputted by a collector voltage detector 3 to the comparator 4 for comparing the collector voltage with the predicted collector voltage pattern. If the collector voltage is higher than the predicted collector voltage pattern by a value which is not less than the prescribed value, an overcurrent detection signal is outputted to a gate voltage generator 5 and, if a transistor 55 is turned on by the overcurrent detection signal, a transistor 58 is turned on, and the gate voltage of the IGBT 1 is lowered, a current flowing through the IGBT 1 is cut off and the IGBT 1 can be protected from an overcurrent.
申请公布号 JP2003079129(A) 申请公布日期 2003.03.14
申请号 JP20010267789 申请日期 2001.09.04
申请人 HITACHI LTD 发明人 ITO TOMOMICHI;UEDA SHIGETA;KATO SHUJI;IKIMI TAKASHI;FUTAMI MOTOO
分类号 H02M1/00;H03K17/08;H03K17/56 主分类号 H02M1/00
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