| 摘要 |
PURPOSE: A thin film laminated structure capable of forming a conductive thin film having superior cohesion, conductivity and durability and high reliability under severe environment in forming circuit or fabricating electrode on an insulator substrate is provided, and a forming method of the thin film laminated structure is provided. CONSTITUTION: The thin film laminated structure(300) comprises a substrate(310) formed of an insulator material; an intermediate layer(330) that is coated on the substrate and consisted of Ni or Ni alloy containing at least 1 wt.% or more of Ag; and a principal conductive layer(340) that is continuously coated on the intermediate layer and consisted of Ag or Ag alloy, wherein the thin film laminated structure further comprises a bottom layer(320) that is formed between the substrate and the intermediate layer and consisted of one or more materials selected from Ni, Ni alloy such as inconel, Ti, Cr, Al and stainless steel, the intermediate layer contains materials composing the bottom layer and the principal layer, constituents of materials for the intermediate layer have an inclined composition in which composition of materials composing the bottom layer is reduced as it is getting far away from the surface contacted with the bottom layer while composition of materials composing the principal conductive layer is increased as it is getting closer to the surface contacted with the principal conductive layer, thickness of the intermediate is 10 to 1000 nm, the substrate is polycarbonate or a mixture of polycarbonate and ABS resin, and the thin film laminated structure further comprises a protection thin film(350) which is formed on the principal conductive layer and consisted of Ni or Ni alloy such as inconel, and a cohesion reinforcing primer layer which is formed on the intermediate layer or bottom layer and the insulator substrate and consisted of resin or paint.
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