| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit in which a sufficient write-in state can be obtained when a power source is raised next even if a state is an insufficient write-in state when the power source falls and reliability of data stored for each memory cell of a nonvolatile memory is improved. SOLUTION: Write-in operation immediately before cut off of a power source of a nonvolatile memory is stored in a data storage circuit DM1 and an address storage circuit AM1, when the power source is applied next, rewrite-in is performed for write-in immediately before cut off using the same data for the same address of a memory array MA1. Thus, a complete write-in state is obtained for each memory cell in the memory array MA1. |
