| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide single crystal ingot suppressing degradation of crystal quality while securing polytype conversion of silicon carbide single crystal at a sufficient growing speed, and having a plurality of polytypes in the direction of crystal growing of a single crystal ingot, an epitaxial wafer obtained from the ingot, and a method of manufacturing the ingot. SOLUTION: The silicon carbide single crystal ingot is characterized in that the ingot contains at least one layer containing a different element, the wafer obtained from the ingot, and the method of manufacturing the ingot. |
