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发明名称
金属薄膜制造装置
摘要
经由喷嘴提供源极气体于一室内,且自电浆天线施加电磁波于该室内。形成之Cl2气体电浆导致许多铜突出物进行蚀刻反应,该突出物系于基材与顶板元件之间相对于电浆天线中之电流方向排列成不连续状态,以形成前驱物(CuxCly)。往控制于温度低于经蚀刻元件之基材输送的前驱物(CuxCly)系藉还原反应转化成单一种Cu离子,且朝向该基材,而于基材表面上形成Cu薄膜。薄膜形成速度快,成本大幅降低,形成之Cu薄膜品质高。
申请公布号
TW200300267
申请公布日期
2003.05.16
申请号
TW091132789
申请日期
2002.11.07
申请人
三菱重工业股份有限公司
发明人
松田 龙一;八幡直树;本 仁志
分类号
H01L21/00
主分类号
H01L21/00
代理机构
代理人
林志刚
主权项
地址
日本
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