| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a test pattern for measuring line contact resistance and a method of manufacturing the same. <P>SOLUTION: The test pattern for measuring line contact resistance comprises a test wafer 20 formed with multiple device isolation films 30 to define multiple active regions 40, multiple coupled diffusion layers 61a, 61b, and 61c formed on a word line area 60 that transverse the multiple device isolation films and multiple active regions, multiple source diffusion layers 51a, 51b, and 51c formed on a first line contact area 50 of one side of the word line area, multiple source diffusion layers 71a, 71b, and 71c formed on a second line contact area 70 of the other side of the word line area, and multiple line contact patterns formed on the first and second line contact areas, wherein the line contact patterns 500a and 500b on the first line contact area and the line contact patterns 700a and 700b on the second line contact area are disposed such that they are offset from each other, and current for resistance measurement flows three- dimensionally. <P>COPYRIGHT: (C)2003,JPO</p> |
