| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an information storage device comprising a highly effective current magnetic field generating means which does not lower a current magnetic field which is required for data writing even when a critical current is lowered. <P>SOLUTION: This information storage device comprising write word line 11, write bit line 21 which is formed across the write word line 11 keeping the predetermined interval, information memory elements 3 which are formed of ferromagnetic material sandwiching tunnel insulation layer 33 and are provided between the write word line 11 and the write bit line 21 at the intersecting areas of the write word line 11 and the write bit line 21, and anti-ferromagnetic material layers 42 formed in the side of write word line 11 of the information memory elements 31. Moreover, this information storage device is also provided with a coil 60 which is formed around the information memory elements 31 to generate a magnetic field. <P>COPYRIGHT: (C)2003,JPO</p> |
