THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR, INVERTER, AND ELECTRONIC EQUIPMENT

摘要

PROBLEM TO BE SOLVED: To simultaneously achieve high carrier mobility and a large on-current by utilizing the laser crystallization technique.

SOLUTION: In the thin-film transistor, the length direction of a crystal particle size that composes semiconductor thin films 3 (3A and 3B) comprising a polycrystalline silicon thin film formed by laser crystallization is aligned along the running direction of a carrier that runs in a channel region 4 of a P- and N-type MOS transistors 23 and 24 of a CMOS transistor 25 composing an inverter.

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