发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To enhance the yield by preventing formation of a void. SOLUTION: This semiconductor device comprises a substrate 7 which has a recessed part 7b and air vents 7h, wherein each end of the air vents 7h is opened in the recessed part 7b, and which consists of a wiring substrate 2 and a heat-diffusion plate 5, a semiconductor chip 1 located on the recessed part 7b, a plurality of wires 4 which connect pads 1a of the semiconductor chip 1 and connecting electrodes formed on the substrate 7 and which stride across the inner peripheral wall 7c of the recessed part 7b, a sealing part 6 that seals the semiconductor chip 1 and the plurality of wires 4 with resin, and a plurality of ball electrodes 3 formed on a land-forming plane 7a of the substrate 7. Formation of a void can be prevented since the resin filling is performed while the residual air in corners of the recessed part 7b escapes from the air vents 7h to the outside during the resin-molding by transfer molding. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003174123(A) 申请公布日期 2003.06.20
申请号 JP20010370869 申请日期 2001.12.05
申请人 HITACHI LTD;NORTHERN JAPAN SEMICONDUCTOR TECHNOLOGIES INC 发明人 HAYASHIDA TETSUYA;KASAI NORIHIKO
分类号 H01L23/12;H01L21/56;(IPC1-7):H01L23/12 主分类号 H01L23/12
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