| 发明名称 |
Ge3N4 NANO BELT AND METHOD OF MANUFACTURING IT |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a new Ge<SB>3</SB>N<SB>4</SB>nano belt, which will become very useful in the future of semiconductor nano technology and method of manufacturing the Ge<SB>3</SB>N<SB>4</SB>nano belt. SOLUTION: This Ge<SB>3</SB>N<SB>4</SB>nano belt has not a circular but a square cross section and long length and includes Ge<SB>3</SB>N<SB>4</SB>. This method comprises a step of mixing the powder of Ge and SiO<SB>2</SB>, and a step of covering this mixed powder with activated carbon particles, a step of heating the mixed powder with activated carbon particles in NH<SB>3</SB>atmosphere to make it grow into a form of Ge<SB>3</SB>N<SB>4</SB>nano belt and a step of cooling Ge<SB>3</SB>N<SB>4</SB>having a form of belt. COPYRIGHT: (C)2003,JPO |
| 申请公布号 |
JP2003191200(A) |
申请公布日期 |
2003.07.08 |
| 申请号 |
JP20010402986 |
申请日期 |
2001.12.21 |
| 申请人 |
NATIONAL INSTITUTE FOR MATERIALS SCIENCE |
发明人 |
BANDO YOSHIO;GAO YIHUA;SATO TADAO |
| 分类号 |
B82B1/00;B82B3/00;C01B21/06;C30B29/38;C30B29/66;H01L29/06;(IPC1-7):B82B1/00 |
主分类号 |
B82B1/00 |
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