| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element having high light emission efficiency which is provided with a multilayer reflecting film whose reflectance is high to a short light emitting wavelength, and to provide a method for manufacturing the element. <P>SOLUTION: An inside first DBR film 3a, an outside first DBR film 13, a quantum well active layer 5, a second DBR film 7 and an SiO<SB>2</SB>film 10 are formed on an n-type GaAs substrate 1. In the outside first DBR film 13 having a part which does not face the SiO<SB>2</SB>film 10, at least one layer contains Al<SB>n</SB>O<SB>m</SB>(n, m: integer). The inside first DBR film 3a which faces the SiO<SB>2</SB>film 10 does not contain Al<SB>n</SB>O<SB>m</SB>. <P>COPYRIGHT: (C)2003,JPO |
