| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a single crystal which has a diameter of 200 mm or more and is free of dislocations. SOLUTION: In the method of manufacturing the single crystal from a semiconductor material, which comprises solidifying a part of a melt, which is maintained in a liquid state by a pulling coil, on a seed crystal while forming a growing single crystal and melting a particulate material so as to maintain the growth of the single crystal, a molten particulate material is introduced with a delay into the melt. COPYRIGHT: (C)2003,JPO |
