| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photomask which can effectively avoid the problem by a side lobe even in a region where the thickness of a semipermeable film is not optimized and a method of manufacturing the same. <P>SOLUTION: If a phase shift mask formed with the semipermeable film 12 on a transparent glass substrate 10 is regulated in the thickness of the semipermeable film 12 so as to be made optimum for the pitch of the patterns in fine pattern regions 14, the sub-peaks by adjacent apertures overlap each other in some cases in isolated pattern regions 16. When the sub-peaks overlap each other, suppressing means of suppressing transmitted light by the overlaps of the sub-peaks by shifting one or both positions of the overlapped sub-peaks (method A), lowering the intensity of the sub-peaks (method B) or eliminating the occurrence of the sub-peaks themselves (method C) is practiced. <P>COPYRIGHT: (C)2003,JPO</p> |
