Method for manufacturing a lithographic reticle for transferring an integrated circuit design to a semiconductor wafer and structure thereof

摘要

A lithographic reticle with subresolution features in the design-pattern is used to control critical dimensions in a semiconductor manufacturing process. To determine the location of subresolution features the location of design and processing features is determined and the subresolution features are formed in areas devoid of design and processing features. The subresolution features can substantially fill all of the area devoid of design and processing features or, instead, selectively fill portions of the area. In one embodiment, the width of the area devoid of design and processing features is less than two times the width of a feature. The presence of the subresolution features results in improved control of small dimensions of features in semiconductor processing, thereby increasing yield and device performance.