SEMICONDUCTOR MEMORY DEVICE WITH NONVOLATILE MEMORY LOCATIONS BUILT AROUND TWO TRANSISTORS

摘要

FIELD: semiconductor memory devices. SUBSTANCE: decide has at least one memory location incorporating n-channel selective transistor, n-channel memory transistor, p-channel junction transistor, vertical and horizontal buses. EFFECT: faultless programming of semiconductor memory device. 6 cl, 2 dwg, 2 tbl