METHOD FOR MANUFACTURING AMORPHOUS METAL OXIDE LAYER, METHOD FOR MANUFACTURING CAPACITANCE ELEMENT HAVING AMORPHOUS METAL OXIDE LAYER, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE,申请号KR20030017551-传众专利搜索

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发明名称	METHOD FOR MANUFACTURING AMORPHOUS METAL OXIDE LAYER, METHOD FOR MANUFACTURING CAPACITANCE ELEMENT HAVING AMORPHOUS METAL OXIDE LAYER, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要
申请公布号	KR20030077988(A)	申请公布日期	2003.10.04
申请号	KR20030017551	申请日期	2003.03.20
申请人		发明人
分类号	H01L27/04;C23C16/40;C23C16/56;H01L21/02;H01L21/314;H01L21/316	主分类号	H01L27/04
代理机构		代理人
主权项
地址

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