| 摘要 |
<p>PURPOSE:To form a thin film on a wafer in a uniform thickness. CONSTITUTION:A recessed part 4 having an outer diameter slightly smaller than that of a wafer 2 is provided on the wafer receptive surface 3 of a susceptor 1 coaxially or practically coaxially with the surface 3. When the wafer is held by the susceptor, the entire periphery of the wafer is brought into contact with the surface 3 in the same width, and the heat is uniformly transmitted from the susceptor to the periphery of the wafer 2. Consequently, a wafer. is uniformly heated, when the susceptor is used in a semiconductor producing device to form a thin film on the wafer surface by the thermochemical reaction with a reactive gas.</p> |
