| 摘要 |
An apparatus for zone-melting recrystallization of a semiconductor layer (5) includes a first heater (2), on which a semiconductor wafer (1) including the semiconductor layer and upper and lower insulating layers (6 & 4) sandwiching the semiconductor layer is mounted, for radiantly heating a rear surface of the semiconductor wafer to a temperature at which the semiconductor layer and the insulating layers are not melted; and a second heater disposed above the semiconductor wafer and radiantly heating a front surface of the semiconductor wafer. The second heater has a heat generating point (10a) that produces a heated spot (5f) in the semiconductor layer and moves spirally while maintaining a prescribed distance from the semiconductor wafer, thereby producing a large-area monocrystalline region (5e) in the semiconductor layer. In this zone-melting recrystallization, a single crystalline nucleus is produced in the semiconductor layer, and the entire semiconductor layer is recrystallized with the crystalline nucleus as a seed crystal. Therefore, the semiconductor layer is recrystallized with the same crystal structure and orientation as those of the crystalline nucleus, so that grain boundaries are reduced, resulting in a semiconductor layer with increased grain size. <IMAGE> |
