| 摘要 |
PROBLEM TO BE SOLVED: To provide an inexpensive silicon wafer excellent in IG (intrinsic gettering) capability by suppressing nonuniformity in the crystal axis direction of a BMD (bulk micro defect) and preventing the formation of defects such as the BMD in the vicinity of an epitaxial layer. SOLUTION: Single crystal silicon is grown by adding a prescribed carbon and making the pulling speed high within a predetermined range when the single crystal silicon is pulled by a CZ method or a MCZ method. Thereby, a silicon wafer having a uniform and stable BMD density appears independently of the part of the crystal from the grown single crystal silicon, and the effect of IG treatment or the like, carried out after that is obtained uniformly independently of the top or bottom of the single crystal, and at the same time, shrinkage and dissolution of the BMD in the vicinity of the surface of a substrate becomes easy. Therefore, when an epitaxial film is formed by epitaxial growth, an epitaxial silicon wafer free from defects on the surface and in the vicinity of the surface can be obtained. COPYRIGHT: (C)2004,JPO
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