| 摘要 |
<P>PROBLEM TO BE SOLVED: To enable an n-type AlGaN clad layer and a p-type AlGaN clad layer, which are both superior in quality, to grow so as to manufacture a high- performance semiconductor laser. <P>SOLUTION: In a method of manufacturing a GaN semiconductor laser, the growth temperature of the p-type AlGaN clad layer is set lower than that of the n-type AlGaN clad layer, and the growth temperatures of the p-type AlGaN clad layer and the n-type AlGaN clad layer are set equal to that of a GaInN active layer or above and set at 980°C or below, e.g. 930 to 960°C. It is preferable that the surface of a base is covered with a p-type AlGaN cap layer which has been grown at the growth temperature nearly equal to that of the GaInN active layer or below before the p-type AlGaN clad layer is grown. <P>COPYRIGHT: (C)2004,JPO |
