发明名称 Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants
摘要 A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the film has pores and a dielectric constant less than 2.6. The film is provided by a chemical vapor deposition method in which a preliminary film is deposited from organosilane and/or organosiloxane precursors and pore-forming agents (porogens), which can be independent of, or bonded to, the precursors. The porogens are subsequently removed to provide the porous film. Compositions for forming the films include porogens and precursors. Porogenated precursors are also useful for providing the film.
申请公布号 US2003198742(A1) 申请公布日期 2003.10.23
申请号 US20020150798 申请日期 2002.05.17
申请人 VRTIS RAYMOND NICHOLAS;O'NEILL MARK LEONARD;VINCENT JEAN LOUISE;LUKAS AARON SCOTT;XIAO MANCHAO;NORMAN JOHN ANTHONY THOMAS 发明人 VRTIS RAYMOND NICHOLAS;O'NEILL MARK LEONARD;VINCENT JEAN LOUISE;LUKAS AARON SCOTT;XIAO MANCHAO;NORMAN JOHN ANTHONY THOMAS
分类号 C23C16/40;(IPC1-7):C23C16/00 主分类号 C23C16/40
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