| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a word line decoder in a NAND type flash memory in which negative voltage can be applied to the word line of a flash memory cell. <P>SOLUTION: The word line decoder in a NAND type flash memory decoding a word line selecting signal so as to select a prescribed memory cell and perform operation, is provided with a row decoder to which an address of the prescribed memory cell is inputted and which outputs a signal indicating that the prescribed memory cell is selected or non-selected, a control section outputting positive voltage when it receives a signal that the prescribed memory cell is selected and outputting negative voltage when it receives a signal that the prescribed memory cell is non-selected, and a drive section comprising of NMOS transistors, outputting negative voltage inputted to a source to a drain when positive voltage outputted from the control section is applied, and cutting off a circuit so that negative voltage inputted to a source is not outputted to a drain when negative voltage outputted from the control section is applied to a gate; and negative voltage inputted to a source is applied to a P well of the NMOS transistor. <P>COPYRIGHT: (C)2004,JPO</p> |
