| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a multi-value nonvolatile memory in which highly accurate and high speed write operation can be performed with a simple constitution. <P>SOLUTION: In write operation for a memory array in which memory cells provided with a third gate controlling a write current flowing among a floating gate, a control gate, a source of a memory cell, and a drain are arranged in a lattice, a highly accurate and high speed write operation is realized with simple constitution by setting voltage given to the third gate out of a plurality of voltage given to the memory array to the prescribed voltage after variation of the other voltage is finished. <P>COPYRIGHT: (C)2004,JPO</p> |
