METHOD FOR FABRICATING METAL OXIDE SEMICONDUCTOR TRANSISTOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a metal oxide semiconductor(MOS) transistor of a semiconductor device is provided to minimize a gate bird's beak phenomenon and a reduction phenomenon of line width of a gate pattern by forming an oxide barrier layer on the sidewall and upper surface of the gate pattern and by performing a rapid thermal process on a semiconductor substrate with the oxide barrier layer. CONSTITUTION: An isolation layer(102) for defining an active region is formed on the semiconductor substrate(101). The gate pattern(106) crossing the active region is formed on the active region. The oxide barrier layer(107) is conformally formed on the front surface of the semiconductor substrate having the gate pattern. A rapid thermal process is performed on the semiconductor substrate with the oxide barrier layer. The oxide barrier layer is formed of an insulation layer that prevents the gate pattern from being oxidized.