发明名称 METHOD FOR FABRICATING CAPACITOR
摘要 PURPOSE: A method for fabricating a capacitor is provided to obtain a low leakage current even if the thickness of alumina is not greater than 50 angstrom by forming the alumina with an excellent characteristic in an interface between a lower electrode and alumina. CONSTITUTION: The lower electrode is formed. The surface of the lower electrode is hydrogen-terminated. An oxide layer is formed on the hydrogen-terminated lower electrode. The alumina is formed on the oxide layer. An upper electrode is formed on the alumina. The oxide layer is formed by a cleaning process using a SC1 cleaning solution, a rapid thermal annealing process and an ozone treatment process.
申请公布号 KR20030092598(A) 申请公布日期 2003.12.06
申请号 KR20020030311 申请日期 2002.05.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 HA, SEUNG CHEOL
分类号 H01L21/8242;(IPC1-7):H01L21/824 主分类号 H01L21/8242
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