METHOD FOR FORMING INTERCONNECTION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming an interconnection of a semiconductor device is provided to improve the uniformity of copper interconnections after CMP(Chemical Mechanical Polishing). CONSTITUTION: After forming an insulating layer(21) on a wafer, trench patterns(22) for a metal line and a via hole are formed by selectively etching the insulating layer. A barrier metal film and a copper film(26) are formed in the trench patterns(22). The resultant structure is then polished by CMP. At this time, a dielectric dummy(24) having the thickness of n is inserted between deformed smart patterns(25).