发明名称 |
Chip module and method of producing a chip module |
摘要 |
<p>The invention concerns a self-aligned non-volatile storage cell in which a MOS transistor with source and drain regions (6) is introducted into the surface region of a semiconductor body (1). The floating gate (12) and control gate (16) of the MOS transistor are housed in overlapping manner in a trench (8), while the transistor channel (17) is guided laterally in a surface region of the trench (8).</p> |
申请公布号 |
IN191647(B) |
申请公布日期 |
2003.12.13 |
申请号 |
IN1704CA1997 |
申请日期 |
1997.09.16 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
PUESCHNER FRANK;STAMPKA PETER;FISCHER JUERGEN;HEITZER JOSEF |
分类号 |
H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L23/00 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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