| 发明名称 | SiC power device having a high voltage termination | ||
| 摘要 | In one general aspect, an apparatus can include a semiconductor region including a silicon carbide material and a junction termination extension implant region disposed in the semiconductor region. The apparatus can include a low interface state density portion of a dielectric layer having at least a portion in contact with the junction termination extension implant region. | ||
| 申请公布号 | US9461108(B2) | 申请公布日期 | 2016.10.04 |
| 申请号 | US201514750655 | 申请日期 | 2015.06.25 |
| 申请人 | Fairchild Semiconductor Corporation | 发明人 | Konstantinov Andrei |
| 分类号 | H01L29/15;H01L29/06;H01L29/16;H01L29/10;H01L29/861;H01L29/78;H01L29/66;H01L29/872;H01L29/732 | 主分类号 | H01L29/15 |
| 代理机构 | Brake Hughes Bellermann LLP | 代理人 | Brake Hughes Bellermann LLP |
| 主权项 | 1. An apparatus, comprising: a semiconductor region including a silicon carbide material; a junction termination extension (JTE) implant region disposed in the semiconductor region; and a low interface state density portion of a dielectric layer having at least a portion in contact with the JTE implant region. | ||
| 地址 | San Jose CA US | ||