| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
In a semiconductor device and a method of manufacturing the semiconductor device, the source wires 126 of a pixel portion 205 are formed of material having low resistance (representatively, aluminum, silver, copper). The source wires of a driving circuit are formed in the same process as the gate wires 162 of the pixel portion and a pixel electrode 163. |
| 申请公布号 |
SG100769(A1) |
申请公布日期 |
2003.12.26 |
| 申请号 |
SG20010007179 |
申请日期 |
2001.11.19 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD |
发明人 |
SHUNPEI YAMAZAKI;JUN KOYAMA |
| 分类号 |
G02F1/1368;G02F1/1362;G09F9/30;H01L21/77;H01L21/8234;H01L21/84;H01L27/08;H01L27/088;H01L27/12;H01L29/423;H01L29/43;H01L29/49;H01L29/786;(IPC1-7):G02F1/136 |
主分类号 |
G02F1/1368 |
| 代理机构 |
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代理人 |
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