发明名称 |
Multilayered diffusion barrier structure for improving adhesion property |
摘要 |
A method has been provided for improving the adhesion of copper to a nitrided metal diffusion barrier material, such as TiN, in an integrated circuit substrate. The method provided a multilayered diffusion barrier structure, comprising a conducting diffusion barrier layer and a poorly conducting adhesion-promoter layer in selected locations. The formation of a poorly conducting adhesion-promoter layer in selected locations permits the optimization of both contact resistance and adhesion property. The poorly conducting adhesion-promoter layer is formed either by the partial incorporation of oxygen into the diffusion barrier or by deposition in an oxygen ambient.
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申请公布号 |
US6670266(B2) |
申请公布日期 |
2003.12.30 |
申请号 |
US20020292929 |
申请日期 |
2002.11.13 |
申请人 |
SIMPLUS SYSTEMS CORPORATION |
发明人 |
NGUYEN TUE;NGUYEN TAI DUNG |
分类号 |
H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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