| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent the diffusion of copper ions and to reduce contact resistance by forming a spacer at both sidewalls of a tungsten plug using a diffusion barrier layer. CONSTITUTION: After forming an interlayer dielectric(207) on a semiconductor substrate(201) having a conductive layer(204), a contact hole is formed to expose the conductive layer. A plug is formed by filling the first barrier layer(208) and a tungsten film(209) into the contact hole and by planarizing. The plug is then protruded by polishing partially the interlayer dielectric(207). A diffusion barrier layer(210) and an interlayer dielectric(211) are sequentially formed on the resultant structure. Damascene pattern is then formed to expose the plug. At this time, a spacer as the diffusion barrier layer(210) is simultaneously formed at both sidewalls of the protrudent plug. Then, a seed layer(213) and a copper film(214) are filled into the damascene pattern.
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