| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which can reduce variations of temperature in a wafer surface at a low cost, by improving the temperature controllability of an RTP. <P>SOLUTION: In a step for performing thermal treatment by subjecting the semiconductor substrate 1 with a lamp light irradiation, a free carrier absorption layer 2 for absorbing the irradiated lamp light is provided, in advance, in the semiconductor substrate 1. Thus, it is possible to increase the temperature controllability in a low temperature range during RTP process, and to reduce, at a low cost, variations in the substrate temperature, not only in a low temperature range but also in a processing temperature range. As a result, semiconductor devices that require precise thermal treatment can be manufactured, without deteriorating the characteristics of the resulting semiconductor devices. <P>COPYRIGHT: (C)2004,JPO |
