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发明名称
半导体特性评估装置
摘要
在一晶片上以一格子状被安排的一基本测量单元上,一电阻测量电路、一电容测量电路、一n–型MOS电晶体测量电路、一p–型MOS电晶体测量电路、及一环形振荡器测量电路系藉由数十个图案而固定。藉由数十个图案被设置的每个测量电路被连接至一测量汇流排以便根据被测物件构成一测量汇流排网。具有一测量端子垫之测量汇流排网连接的切换适当地藉由自X、Y位址解码器被输出至X、Y位址选择信号线的X、Y位址选择信号而被电性控制。
申请公布号
TW200403782
申请公布日期
2004.03.01
申请号
TW092116807
申请日期
2003.06.20
申请人
半导体理工学研究中心股份有限公司
发明人
大川真一;青木正和
分类号
H01L21/66
主分类号
H01L21/66
代理机构
代理人
恽轶群;陈文郎
主权项
地址
日本
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