PLASMA TREATING APPARATUS AND PLASMA TREATING METHOD

摘要

PURPOSE: A plasma treating apparatus is provided to stabilize a process and to prevent reaction byproducts from being deposited on a part of the inner surface of a process chamber by stably etching a non-volatile material. CONSTITUTION: A process chamber(1) is prepared. A process gas introducing pipe(21) introduces process gas to the process chamber. A mounting electrode(5) mounts and maintains a sample, disposed in the process chamber. A RF(radio frequency) power(9,16) for generating a bias potential supplies the bias potential to the sample. An induction coil(12) supplies RF power and makes the process gas in plasma. A conductor member(18) supplies the bias potential to a part of the inner surface of the process chamber, installed in the process chamber. A trap member that has an adhesion surface of the reaction product is included in another part of the inner surface of the process chamber, capable of being detachably attached.