СПОСОБ ОПРЕДЕЛЕНИЯ ДРЕЙФОВОЙ ПОДВИЖНОСТИ ПОЛУПРОВОДНИКОВ

摘要

FIELD: semiconductor engineering and electronics. ^ SUBSTANCE: proposed method depends on principally new approach to evaluation of drift mobility of semiconductors and includes measurement of time taken to attain maximal (peak) diffusion-drift current of nonequilibrium carriers excited by short light pulses from heavy absorption area through one of contacts. Mobility can be calculated from formula = d2(2Utmax)-1, where d is distance between contacts; U is applied voltage; tmax is time taken to attain peak value of photocurrent; lE is drift length; lD is diffusion length. ^ EFFECT: facilitated measurement procedure. ^ 1 cl, 2 dwg