| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an oxide semiconductor light emitting device which is excellent in both internal luminous efficiency and external light output efficiency and high in reliability. <P>SOLUTION: A ZnO semiconductor light emitting layer 14 is pinched between an n-type ZnO semiconductor layer 13 and a p-type ZnO semiconductor layer 15, and the carrier concentration of the surface of the n-type ZnO semiconductor layer 13 opposite to its other surface facing the light emitting layer 14 is set higher than that of the surface of the p-type ZnO semiconductor layer 15 opposite to its other surface facing the light emitting layer 14. The n-type ZnO semiconductor layer 13 and the p-type ZnO semiconductor layer 15 are so regulated as to be gradually reduced in carrier concentration as approaching the light emitting layer 14. The layers may be each set constant in carrier concentration through their overall thicknesses. <P>COPYRIGHT: (C)2004,JPO |
